DIODE SILICON PRV=100V IF=0.3A DO-35 CASE FAST TRR=4NS FAST SWITCHING
Datasheet:
NTE519
Datasheet:
NTE519
| Capacitance | 4 pF (Max.) |
|---|---|
| Capacitance, Junction | 4 pF |
| Current, Forward | 300 mA |
| Current, Reverse | 50 μA |
| Current, Surge | 2 A |
| Current, Surge, Forward | 2 A |
| Power Dissipation | 440 mW |
| Primary Type | Rectifier |
| Speed, Switching | Ultrafast |
| Temperature, Junction, Maximum | +200 °C |
| Thermal Resistance, Junction to Ambient | 350 K⁄W |
| Time, Recovery | 8 ns |
| Voltage, Breakdown | 100 V (Min.) |
| Voltage, Forward | 1 V |
| Voltage, Repetitive Peak Reverse | 100 V |
| Voltage, Reverse | 75 V |
